AUIRF1324S-7P

new-10%

Manufacturer part number:AUIRF1324S-7P

Manufacturer:Infineon Technologies

Description:INFINEON AUIRF1324S-7P MOSFET Transistor, N Channel, 429 A, 24 V, 800 ohm, 10 V, 2 V

Case Package:SOT-23

Datasheet:AUIRF1324S-7P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	39 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins	7
Packaging	Tube
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Max Power Dissipation	300W
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-XSSO-G6
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1m Ω @ 160A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7700pF @ 19V
Current - Continuous Drain (Id) @ 25°C	240A Tc
Gate Charge (Qg) (Max) @ Vgs	252nC @ 10V
Rise Time	240ns
Fall Time (Typ)	93 ns
Turn-Off Delay Time	86 ns
Continuous Drain Current (ID)	429A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	240A
Drain to Source Breakdown Voltage	24V
Avalanche Energy Rating (Eas)	230 mJ
Height	4.55mm
Length	10.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant