IRF6611TR1

new-10%

Manufacturer part number:IRF6611TR1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 32A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6611TR1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	5
Supplier Device Package	DIRECTFET™ MX
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Termination	SMD/SMT
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	27A
Power Dissipation-Max	3.9W Ta 89W Tc
Power Dissipation	3.9W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.6mOhm @ 27A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4860pF @ 15V
Current - Continuous Drain (Id) @ 25°C	32A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs	56nC @ 4.5V
Rise Time	57ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.5 ns
Turn-Off Delay Time	24 ns
Reverse Recovery Time	24 ns
Continuous Drain Current (ID)	22A
Threshold Voltage	2.25V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Input Capacitance	4.86nF
Drain to Source Resistance	2mOhm
Rds On Max	2.6 mΩ
Nominal Vgs	2.25 V
REACH SVHC	No SVHC
RoHS Status	Non-RoHS Compliant
Lead Free	Lead Free