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IRFH7936TR2PBF

IRFH7936TR2PBF

IRFH7936TR2PBF

Infineon Technologies

MOSFET N-CH 30V 20A PQFN56

SOT-23

IRFH7936TR2PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Supplier Device Package 8-PQFN (5x6)
Packaging Cut Tape (CT)
Published 2013
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 4.8MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.1W
Technology MOSFET (Metal Oxide)
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2360pF @ 15V
Current - Continuous Drain (Id) @ 25°C 20A Ta 54A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.36nF
Recovery Time 21 ns
Drain to Source Resistance 4.8mOhm
Rds On Max 4.8 mΩ
Nominal Vgs 1.8 V
Height 950μm
Length 5.2324mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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