IRF6611TR1PBF

new-10%

Manufacturer part number:IRF6611TR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 32A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6611TR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	5
Supplier Device Package	DIRECTFET™ MX
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	32A
Number of Elements	1
Power Dissipation-Max	3.9W Ta 89W Tc
Power Dissipation	89W
Turn On Delay Time	18 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.6mOhm @ 27A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4860pF @ 15V
Current - Continuous Drain (Id) @ 25°C	32A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs	56nC @ 4.5V
Rise Time	57ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.5 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	22A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	4.86nF
Drain to Source Resistance	3.4mOhm
Rds On Max	2.6 mΩ
Nominal Vgs	2.25 V
Height	506μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free