TPCF8B01(TE85L,F,M

new-10%

Manufacturer part number:TPCF8B01(TE85L,F,M

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET P-CH 20V 2.7A VS-8

Case Package:SOT-23

Datasheet:TPCF8B01(TE85L,F,M Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	U-MOSIII
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	330mW Ta
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	110m Ω @ 1.4A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds	470pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.7A Ta
Gate Charge (Qg) (Max) @ Vgs	6nC @ 5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
FET Feature	Schottky Diode (Isolated)