IRF6619TRPBF

new-10%

Manufacturer part number:IRF6619TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 20V 30A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6619TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
Current Rating	30A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 89W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	89W
Case Connection	DRAIN
Turn On Delay Time	21 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5040pF @ 10V
Current - Continuous Drain (Id) @ 25°C	30A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs	57nC @ 4.5V
Rise Time	71ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9.3 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	24A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0022Ohm
Drain to Source Breakdown Voltage	20V
Pulsed Drain Current-Max (IDM)	240A
Avalanche Energy Rating (Eas)	240 mJ
Height	506μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free