IRFU4105ZPBF

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IRFU4105ZPBF

Manufacturer part number:IRFU4105ZPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 30A I-PAK

Case Package:SOT-23

Datasheet:IRFU4105ZPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2003
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Current Rating	30A
[email protected] Reflow Temperature-Max (s)	30
Lead Pitch	2.28mm
Lead Length	9.65mm
Number of Elements	1
Power Dissipation-Max	48W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	48W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24.5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	740pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	30A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0245Ohm
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	120A
Dual Supply Voltage	55V
Avalanche Energy Rating (Eas)	29 mJ
Recovery Time	29 ns
Nominal Vgs	4 V
Height	6.1mm
Length	6.6mm
Width	2.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free