IRF6633ATRPBF

new-10%

Manufacturer part number:IRF6633ATRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 20V 16A DIRECTFET-MU

Case Package:SOT-23

Datasheet:IRF6633ATRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MU
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	HEXFET®
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.3W Ta 42W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	42W
Case Connection	DRAIN
Turn On Delay Time	6.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.6m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1410pF @ 10V
Current - Continuous Drain (Id) @ 25°C	16A Ta 69A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7.7 ns
Turn-Off Delay Time	8.4 ns
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	69A
Drain-source On Resistance-Max	0.0056Ohm
Drain to Source Breakdown Voltage	20V
Avalanche Energy Rating (Eas)	65 mJ
Height	700μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
RoHS Status	RoHS Compliant