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STE140NF20D

STE140NF20D

STE140NF20D

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 12m Ω @ 70A, 10V ±20V 11100pF @ 25V 338nC @ 10V SOT-227-4, miniBLOC

SOT-23

STE140NF20D Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 12 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series STripFET™ II
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 10mOhm
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE ENERGY RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number STE1
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 500W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Case Connection ISOLATED
Turn On Delay Time 232 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 140A Tc
Gate Charge (Qg) (Max) @ Vgs 338nC @ 10V
Rise Time 218ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 250 ns
Turn-Off Delay Time 283 ns
Continuous Drain Current (ID) 140A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 560A
Avalanche Energy Rating (Eas) 800 mJ
Nominal Vgs 3 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $49.86000 $49.86
10 $46.62400 $466.24
100 $40.42500 $4042.5
STE140NF20D Product Details

STE140NF20D Description


STE140NF20D is an N-channel power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 200V. This Power MOSFET is made utilizing the proprietary STripFETTM technology from STMicroelectronics, which is specifically engineered to reduce gate charge and input capacitance. Due to the intrinsic fast body diode, the device has incredibly quick switching performance, making it perfect for hard switching topologies.



STE140NF20D Features


  • Exceptional dv/dt capability

  • Low gate charge

  • 100% avalanche tested



STE140NF20D Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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