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IRF6633TR1

IRF6633TR1

IRF6633TR1

Infineon Technologies

MOSFET N-CH 20V 16A DIRECTFET-MP

SOT-23

IRF6633TR1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MP
Number of Pins 7
Supplier Device Package DIRECTFET™ MP
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.3W Ta 42W Tc
Power Dissipation 2.3W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.6mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Ta 59A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 31ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.3 ns
Turn-Off Delay Time 12 ns
Reverse Recovery Time 18 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Input Capacitance 1.25nF
Rds On Max 5.6 mΩ
Nominal Vgs 1.8 V
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $11.265747 $11.265747
10 $10.628064 $106.28064
100 $10.026475 $1002.6475
500 $9.458939 $4729.4695
1000 $8.923527 $8923.527

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