IRF6635 Description

The IRF6635 combines the latest [email protected] Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only a 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment, and vapor-phase, infra-red, or convection soldering techniques. The DirectFET package allows dual-sided cooling to maximize thermal transfer in power systems, improving the previous best thermal resistance by 80%。

IRF6635 Features

• RoHS compliant containing no lead or bromide

• Low Profile (<0.7 mm)

• Dual Sided Cooling Compatible

• Ultra-Low Package Inductance

• Optimized for High-Frequency Switching

• ideal for CPU Core DC-DC Converters

• Optimized for SyncFET socket of Sync. Buck Converter

• Low Conduction and Switching Losses

• Compatible with existing Surface Mount Techniques

IRF6635 Applications

• eFuse

• HotSwap

• MultiPhase SyncFET

• ORing