STB70NF03L-1

new-10%

Manufacturer part number:STB70NF03L-1

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 30V 70A I2PAK

Case Package:SOT-23

Datasheet:STB70NF03L-1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Base Part Number	STB70N
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	100W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.5m Ω @ 35A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1440pF @ 25V
Current - Continuous Drain (Id) @ 25°C	70A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 5V
Rise Time	165ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±18V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	70A
Gate to Source Voltage (Vgs)	18V
Drain-source On Resistance-Max	0.0095Ohm
Pulsed Drain Current-Max (IDM)	280A
Avalanche Energy Rating (Eas)	500 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant