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IRF6637TR1PBF

IRF6637TR1PBF

IRF6637TR1PBF

Infineon Technologies

MOSFET N-CH 30V 14A DIRECTFET

SOT-23

IRF6637TR1PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MP
Number of Pins 5
Supplier Device Package DIRECTFET™ MP
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 14A
Number of Elements 1
Power Dissipation-Max 2.3W Ta 42W Tc
Power Dissipation 89W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2.35V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14A Ta 59A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.8 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.33nF
Drain to Source Resistance 10.8mOhm
Rds On Max 7.7 mΩ
Nominal Vgs 1.8 V
Length 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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