IRF6645TRPBF

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IRF6645TRPBF

Manufacturer part number:IRF6645TRPBF

Manufacturer:Infineon Technologies

Description:IRF6645TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF6645TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric SJ
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	HEXFET®
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Current Rating	5.7A
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.2W Ta 42W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	42W
Case Connection	DRAIN
Turn On Delay Time	9.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 5.7A, 10V
Vgs(th) (Max) @ Id	4.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	890pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.7A Ta 25A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	5.1 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	5.7mA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.035Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	45A
Avalanche Energy Rating (Eas)	29 mJ
Height	410μm
Length	3.95mm
Width	3.95mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free