IRF6648TR1PBF Description

The IRF6648PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET? packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET? package is compatible with existing layout geometries used in power applications, PCB assembly equipment, and vapor phase, infra-red, or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET? package allows dual-sided cooling to maximize thermal transfer in power systems, improving the previous best thermal resistance by 80%. 

IRF6648TR1PBF Features

RoHS Compliant

Lead-Free (Qualified up to 260??C Reflow)

Application Specific MOSFETs

Optimized for Synchronous Rectification for

5V to 12V outputs

Low Conduction Losses

Ideal for 24V input Primary Side Forward Converters

Low Profile (<0.7mm)

Dual-Sided Cooling Compatible

Compatible with existing Surface Mount Techniques