SSH22N50A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
SSH22N50A Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
278W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
250mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5120pF @ 25V
Current - Continuous Drain (Id) @ 25°C
22A Tc
Gate Charge (Qg) (Max) @ Vgs
236nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
SSH22N50A Product Details
Description
The SSH22N50A is an Advanced Power MOSFET. The power MOSFET is the most widely used power semiconductor device in the world because of its low gate drive power, quick switching speed, simple advanced paralleling capability, wide bandwidth, robustness, easy drive, easy biasing, simplicity of application, and ease of repair.