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SSH22N50A

SSH22N50A

SSH22N50A

ON Semiconductor

SSH22N50A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

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SSH22N50A Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 278W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 250mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 236nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
SSH22N50A Product Details

Description


The SSH22N50A is an Advanced Power MOSFET. The power MOSFET is the most widely used power semiconductor device in the world because of its low gate drive power, quick switching speed, simple advanced paralleling capability, wide bandwidth, robustness, easy drive, easy biasing, simplicity of application, and ease of repair.



Features


  • Improved Gate Charge

  • Extended Safe Operating Area

  • Lower Leakage Current: 10|ìA (Max.) @ VDS = 500V

  • Lower RDS(ON): 0.197? (Typ.)

  • Avalanche Rugged Technology

  • Rugged Gate Oxide Technology

  • Lower Input Capacitance



Applications


  • Power-Over-Ethernet (PoE)

  • Solar inverters

  • Automotive applications

  • Switch, buck and synchronous rectification

  • Uninterruptible Power Supplies (UPS)

  • Small motor control

  • Switch Mode Power Supplies (SMPS)


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