IRF6711STRPBF

new-10%

Manufacturer part number:IRF6711STRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 19A DIRECTFET-SQ

Case Package:SOT-23

Datasheet:IRF6711STRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric SQ
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.2W Ta 42W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	42W
Case Connection	DRAIN
Turn On Delay Time	7.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.8m Ω @ 19A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1810pF @ 13V
Current - Continuous Drain (Id) @ 25°C	19A Ta 84A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5.4 ns
Turn-Off Delay Time	7.1 ns
Continuous Drain Current (ID)	19A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	84A
Drain-source On Resistance-Max	0.0038Ohm
Drain to Source Breakdown Voltage	25V
Avalanche Energy Rating (Eas)	62 mJ
Height	506μm
Length	4.826mm
Width	3.95mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant