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IRFH7921TR2PBF

IRFH7921TR2PBF

IRFH7921TR2PBF

Infineon Technologies

MOSFET N-CH 30V 15A PQFN56

SOT-23

IRFH7921TR2PBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package PQFN (5x6) Single Die
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 8.5MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 3.1W Ta
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1210pF @ 15V
Current - Continuous Drain (Id) @ 25°C 15A Ta 34A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 7.6ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.7 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 15A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.21nF
Recovery Time 18 ns
Drain to Source Resistance 8.5mOhm
Rds On Max 8.5 mΩ
Nominal Vgs 1.8 V
Height 950μm
Length 6mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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