IRF6712STR1PBF

new-10%

Manufacturer part number:IRF6712STR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 17A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6712STR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric SQ
Number of Pins	5
Supplier Device Package	DIRECTFET™ SQ
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	4.9MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.2W Ta 36W Tc
Power Dissipation	2.2W
Turn On Delay Time	11 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.9mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	2.4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	1570pF @ 13V
Current - Continuous Drain (Id) @ 25°C	17A Ta 68A Tc
Gate Charge (Qg) (Max) @ Vgs	18nC @ 4.5V
Rise Time	40ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	17A
Threshold Voltage	1.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
Dual Supply Voltage	25V
Input Capacitance	1.57nF
Recovery Time	26 ns
Drain to Source Resistance	8.7mOhm
Rds On Max	4.9 mΩ
Nominal Vgs	1.9 V
Height	506μm
Length	4.826mm
Width	3.95mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free