IRF6718L2TR1PBF

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IRF6718L2TR1PBF

Manufacturer part number:IRF6718L2TR1PBF

Manufacturer:Infineon Technologies

Description:IRF6718L2TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF6718L2TR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric L6
Number of Pins	13
Supplier Device Package	DIRECTFET L6
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	500kOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	4.3W Ta 83W Tc
Element Configuration	Single
Power Dissipation	4.3W
Turn On Delay Time	67 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	0.7mOhm @ 61A, 10V
Vgs(th) (Max) @ Id	2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	6500pF @ 13V
Current - Continuous Drain (Id) @ 25°C	61A Ta 270A Tc
Gate Charge (Qg) (Max) @ Vgs	96nC @ 4.5V
Rise Time	140ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	53 ns
Turn-Off Delay Time	47 ns
Continuous Drain Current (ID)	61A
Threshold Voltage	1.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
Dual Supply Voltage	25V
Input Capacitance	6.5nF
Recovery Time	59 ns
Drain to Source Resistance	700μOhm
Rds On Max	700 μΩ
Nominal Vgs	1.9 V
Height	508μm
Length	9.144mm
Width	7.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free