IRF6603 Description

The IRF6603 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET? packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only a 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, and infra-red or convection soldering techniques. The DirectFET package allows dual-sided cooling to maximize thermal transfer in power systems, IMPROVING the previous best thermal resistance by 80%.

IRF6603 Features

• Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• High Cdv/dt Immunity

• Low Profile (<0.7 mm)

• Dual-Sided Cooling Compatible

• Compatible with existing Surface Mount Techniques

IRF6603 Applications

• High-efficiency DC-DC converters