IRF6720S2TR1PBF

new-10%

Manufacturer part number:IRF6720S2TR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 11A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6720S2TR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric S1
Number of Pins	6
Supplier Device Package	DIRECTFET S1
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	8MOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	1.7W Ta 17W Tc
Power Dissipation	17W
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1140pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Rise Time	35ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	11A
Threshold Voltage	1.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Input Capacitance	1.14nF
Recovery Time	24 ns
Drain to Source Resistance	12.8mOhm
Rds On Max	8 mΩ
Nominal Vgs	2 V
Height	558.8μm
Length	3.95mm
Width	3.95mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free