APT11N80KC3G

new-10%

Manufacturer part number:APT11N80KC3G

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 800V 11A TO-220

Case Package:SOT-23

Datasheet:APT11N80KC3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	CoolMOS™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	11A
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	156W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	156W
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	450m Ω @ 7.1A, 10V
Vgs(th) (Max) @ Id	3.9V @ 680μA
Input Capacitance (Ciss) (Max) @ Vds	1585pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	11A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.45Ohm
Avalanche Energy Rating (Eas)	470 mJ
Height	9.66mm
Length	10.66mm
Width	4.82mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free