IRF6721STR1PBF     Description

  IRF6721SPbF combines the latest HEXFET power MOSFET silicon technology with advanced DirectFET silicon packaging to achieve the lowest on-resistance in an 8 micron package with a form factor of only 0.7 mm. When following application instructions AN- 1035, the DirectFET package is compatible with existing layout geometry used in power applications, printed circuit board assembly equipment and gas phase, infrared or convection welding technologies. DirectFET components allow double-sided cooling to maximize heat transfer in the power system. Improved the previous best heat resistance by 80%.

The IRF6721SPbF balances low resistance and low charge as well as ultra-low package inductors, thereby reducing turn-on and switching losses. The reduced total loss makes the product ideal for high-efficiency DC-DC converters that power the latest generation of processors running at higher frequencies. IRF6721SPbF optimizes the key parameters in the synchronous buck operation of 12V bus converters (including RDS and gate charge) to minimize loss.

IRF6721STR1PBF     Features

RoHS Compliant and Halogen Free

Low Profile(<0.7mm)

Dual Sided Cooling Compatible

Ultra Low PackageInductance

Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters

Optimized for Control FET application

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques

100%Rg tested

IRF6721STR1PBF      Applications

high-efficiency DC-DC converters