IRF6722MTR1PBF

new-10%

Manufacturer part number:IRF6722MTR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 13A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6722MTR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MP
Number of Pins	5
Supplier Device Package	DIRECTFET™ MP
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.3W Ta 42W Tc
Power Dissipation	42W
Turn On Delay Time	11 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.7mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	2.4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 15V
Current - Continuous Drain (Id) @ 25°C	13A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V
Rise Time	7.8ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.1 ns
Turn-Off Delay Time	9.5 ns
Continuous Drain Current (ID)	13A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	1.3nF
Recovery Time	29 ns
Drain to Source Resistance	10.8mOhm
Rds On Max	7.7 mΩ
Height	508μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant