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IRF6722STRPBF

IRF6722STRPBF

IRF6722STRPBF

Infineon Technologies

MOSFET N-CH 30V 13A DIRECTFET

SOT-23

IRF6722STRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric ST
Number of Pins 5
Supplier Device Package DIRECTFET™ ST
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.2W Ta 42W Tc
Power Dissipation 42W
Turn On Delay Time 7.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.3mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 1320pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A Ta 58A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 11ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.7 ns
Turn-Off Delay Time 8.5 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.32nF
Drain to Source Resistance 10.3mOhm
Rds On Max 7.3 mΩ
Height 506μm
Length 4.826mm
Width 3.95mm
Radiation Hardening No
RoHS Status RoHS Compliant

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