IRF6798MTR1PBF

new-10%

Manufacturer part number:IRF6798MTR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 37A DIRECTFET-MX

Case Package:SOT-23

Datasheet:IRF6798MTR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	5
Supplier Device Package	DIRECTFET™ MX
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	2.1MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	2.8W Ta 78W Tc
Power Dissipation	78W
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.3mOhm @ 37A, 10V
Vgs(th) (Max) @ Id	2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	6560pF @ 13V
Current - Continuous Drain (Id) @ 25°C	37A Ta 197A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 4.5V
Rise Time	31ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	37A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
Input Capacitance	6.56nF
FET Feature	Schottky Diode (Body)
Drain to Source Resistance	2.1mOhm
Rds On Max	1.3 mΩ
Nominal Vgs	1.8 V
Height	506μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	RoHS Compliant
Lead Free	Lead Free