IRLI640G

new-10%

Manufacturer part number:IRLI640G

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 9.9A TO220FP

Case Package:SOT-23

Datasheet:IRLI640G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package	TO-220-3
Weight	6.000006g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2017
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	40W Tc
Element Configuration	Single
Turn On Delay Time	8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	180mOhm @ 5.9A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.9A Tc
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Rise Time	83ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	4V 5V
Vgs (Max)	±10V
Fall Time (Typ)	52 ns
Turn-Off Delay Time	44 ns
Continuous Drain Current (ID)	9.9A
Gate to Source Voltage (Vgs)	10V
Input Capacitance	1.8nF
Drain to Source Resistance	180mOhm
Rds On Max	180 mΩ
Height	9.8mm
Length	10.63mm
Width	4.83mm
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant