IRF6798MTRPBF

new-10%

Manufacturer part number:IRF6798MTRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 37A DIRECTFET-MX

Case Package:SOT-23

Datasheet:IRF6798MTRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 78W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	78W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.3m Ω @ 37A, 10V
Vgs(th) (Max) @ Id	2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	6560pF @ 13V
Current - Continuous Drain (Id) @ 25°C	37A Ta 197A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 4.5V
Rise Time	31ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	37A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	197A
Drain-source On Resistance-Max	0.0013Ohm
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	300A
Avalanche Energy Rating (Eas)	220 mJ
FET Feature	Schottky Diode (Body)
Height	506μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
RoHS Status	RoHS Compliant