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IRF6798MTRPBF

IRF6798MTRPBF

IRF6798MTRPBF

Infineon Technologies

MOSFET N-CH 25V 37A DIRECTFET-MX

SOT-23

IRF6798MTRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 78W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 78W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 37A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 6560pF @ 13V
Current - Continuous Drain (Id) @ 25°C 37A Ta 197A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 4.5V
Rise Time 31ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 37A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 197A
Drain-source On Resistance-Max 0.0013Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 300A
Avalanche Energy Rating (Eas) 220 mJ
FET Feature Schottky Diode (Body)
Height 506μm
Length 6.35mm
Width 5.05mm
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.486169 $0.486169
10 $0.458649 $4.58649
100 $0.432689 $43.2689
500 $0.408197 $204.0985
1000 $0.385091 $385.091

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