IRF6810STRPBF

new-10%

Manufacturer part number:IRF6810STRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N CH 25V 16A S1

Case Package:SOT-23

Datasheet:IRF6810STRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric S1
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.1W Ta 20W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Case Connection	DRAIN
Turn On Delay Time	8.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.2m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	2.1V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1038pF @ 13V
Current - Continuous Drain (Id) @ 25°C	16A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	4.8 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	16A
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	50A
Drain-source On Resistance-Max	0.0052Ohm
Drain to Source Breakdown Voltage	25V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant