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IXFH40N30

IXFH40N30

IXFH40N30

IXYS

MOSFET (Metal Oxide) N-Channel Tube 85m Ω @ 500mA, 10V ±20V 4800pF @ 25V 200nC @ 10V TO-247-3

SOT-23

IXFH40N30 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2000
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 85mOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 300V
Technology MOSFET (Metal Oxide)
Current Rating 40A
Pin Count 3
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 60ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 40A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 300V
Dual Supply Voltage 300V
Recovery Time 200 ns
Nominal Vgs 4 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $9.95000 $9.95
30 $8.15900 $244.77
120 $7.36300 $883.56
510 $6.16900 $3146.19
1,020 $5.57200 $5.572
IXFH40N30 Product Details

IXFH40N30 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4800pF @ 25V.This device has a continuous drain current (ID) of [40A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=300V, the drain-source breakdown voltage is 300V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Its overall power consumption can be reduced by using drive voltage (10V).

IXFH40N30 Features


a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
a threshold voltage of 4V


IXFH40N30 Applications


There are a lot of IXYS
IXFH40N30 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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