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IRF7316TRPBF

IRF7316TRPBF

IRF7316TRPBF

Infineon Technologies

IRF7316TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

SOT-23

IRF7316TRPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 58mOhm
Additional Feature AVALANCHE RATED
Voltage - Rated DC -30V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating -4.9A
Base Part Number IRF7316PBF
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 13 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 4.9A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.9A
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) -4.9A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 140 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 66 ns
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs -1 V
Height 1.75mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.19000 $1.19
500 $1.1781 $589.05
1000 $1.1662 $1166.2
1500 $1.1543 $1731.45
2000 $1.1424 $2284.8
2500 $1.1305 $2826.25
IRF7316TRPBF Product Details

IRF7316TRPBF       Description

 

  The fourth generation HEXFET rectifier from the world uses advanced processing technology to achieve a positive low turn-on rate on each side, which is combined with the fast switching speed of HEXFET power supply and rugged device design! As we all know, MOSFET provides designers with an extremely efficient and reliable device for use in a variety of applications.

SO-8 has been improved with custom eadtrame to enhance thermomechanical properties and multi-chip capabilities, making it ideal for a variety of power applications. With these improvements, multiple devices can be used while Dramatica reduces circuit board space. The package is suitable for gas phase infrared. Or wave soldering technology

 

IRF7316TRPBF            Features


Generation V Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Surface Mount

Fully Avalanche Rated

Lead-Free

 

IRF7316TRPBF      Applications


MOSFET provides designers with an extremely efficient and reliable device for use in a variety of applications.

 



 



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