IRF7316TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website
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IRF7316TRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Series
HEXFET®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
58mOhm
Additional Feature
AVALANCHE RATED
Voltage - Rated DC
-30V
Max Power Dissipation
2W
Terminal Form
GULL WING
Current Rating
-4.9A
Base Part Number
IRF7316PBF
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
13 ns
FET Type
2 P-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
58m Ω @ 4.9A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
710pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4.9A
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Rise Time
13ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
32 ns
Turn-Off Delay Time
34 ns
Continuous Drain Current (ID)
-4.9A
Threshold Voltage
-1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-30V
Pulsed Drain Current-Max (IDM)
30A
Avalanche Energy Rating (Eas)
140 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
Recovery Time
66 ns
Max Junction Temperature (Tj)
150°C
FET Feature
Logic Level Gate
Nominal Vgs
-1 V
Height
1.75mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.19000
$1.19
500
$1.1781
$589.05
1000
$1.1662
$1166.2
1500
$1.1543
$1731.45
2000
$1.1424
$2284.8
2500
$1.1305
$2826.25
IRF7316TRPBF Product Details
IRF7316TRPBF Description
The fourth generation HEXFET rectifier from the world uses advanced processing technology to achieve a positive low turn-on rate on each side, which is combined with the fast switching speed of HEXFET power supply and rugged device design! As we all know, MOSFET provides designers with an extremely efficient and reliable device for use in a variety of applications.
SO-8 has been improved with custom eadtrame to enhance thermomechanical properties and multi-chip capabilities, making it ideal for a variety of power applications. With these improvements, multiple devices can be used while Dramatica reduces circuit board space. The package is suitable for gas phase infrared. Or wave soldering technology
IRF7316TRPBF Features
GenerationVTechnology
Ultra LowOn-Resistance
Dual P-Channel MOSFET
Surface Mount
Fully AvalancheRated
Lead-Free
IRF7316TRPBF Applications
MOSFET provides designers with an extremely efficient and reliable device for use in a variety of applications.