PMGD280UN,115

new-10%

Manufacturer part number:PMGD280UN,115

Manufacturer:Nexperia USA Inc.

Description:MOSFET 2N-CH 20V 0.87A 6TSSOP

Case Package:SOT-23

Datasheet:PMGD280UN,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.75
Terminal Form	GULL WING
Pin Count	6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power Dissipation	400mW
Power - Max	400mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	340m Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	45pF @ 20V
Gate Charge (Qg) (Max) @ Vgs	0.89nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Continuous Drain Current (ID)	870mA
Drain Current-Max (Abs) (ID)	0.87A
Drain-source On Resistance-Max	0.34Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant