IRF7324D1PBF

new-10%

Manufacturer part number:IRF7324D1PBF

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 20V 2.2A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7324D1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	FETKY™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Current Rating	-2.9A
Number of Elements	1
Power Dissipation-Max	2W Ta
Power Dissipation	2W
Turn On Delay Time	10 ns
Forward Current	1.7A
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	270mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	260pF @ 15V
Current - Continuous Drain (Id) @ 25°C	2.2A Ta
Gate Charge (Qg) (Max) @ Vgs	7.8nC @ 4.5V
Rise Time	12ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±12V
Forward Voltage	500mV
Fall Time (Typ)	7.6 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	-2.2A
Threshold Voltage	-700mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Dual Supply Voltage	-20V
Input Capacitance	260pF
FET Feature	Schottky Diode (Isolated)
Drain to Source Resistance	270mOhm
Rds On Max	270 mΩ
Nominal Vgs	-700 mV
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free