SIA450DJ-T1-GE3

new-10%

Manufacturer part number:SIA450DJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 240V 1.52A SC70-6

Case Package:SOT-23

Datasheet:SIA450DJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
JESD-30 Code	S-XDSO-C3
Number of Elements	1
Power Dissipation-Max	3.3W Ta 15W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	15W
Case Connection	DRAIN
Turn On Delay Time	13.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.9 Ω @ 700mA, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	167pF @ 120V
Current - Continuous Drain (Id) @ 25°C	1.52A Tc
Gate Charge (Qg) (Max) @ Vgs	7.04nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	1.52A
Threshold Voltage	2.4V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.7A
Drain to Source Breakdown Voltage	240V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant