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IRF7326D2PBF

IRF7326D2PBF

IRF7326D2PBF

Infineon Technologies

MOSFET P-CH 30V 3.6A 8-SOIC

SOT-23

IRF7326D2PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series FETKY™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Current Rating -3.6A
Number of Elements 1
Power Dissipation-Max 2W Ta
Power Dissipation 2W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) -3.6A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Input Capacitance 440pF
FET Feature Schottky Diode (Isolated)
Drain to Source Resistance 160mOhm
Rds On Max 100 mΩ
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

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