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IRF7326D2TR

IRF7326D2TR

IRF7326D2TR

Infineon Technologies

MOSFET P-CH 30V 3.6A 8-SOIC

SOT-23

IRF7326D2TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 1999
Series FETKY™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
FET Feature Schottky Diode (Isolated)
RoHS Status Non-RoHS Compliant

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