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BUK9520-55,127

BUK9520-55,127

BUK9520-55,127

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 20m Ω @ 25A, 5V ±10V 2400pF @ 25V 55V TO-220-3

SOT-23

BUK9520-55,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMOS™
Published 1998
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTION
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 116W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 52A Tc
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±10V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 52A
Drain-source On Resistance-Max 0.02Ohm
Pulsed Drain Current-Max (IDM) 208A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 110 mJ
Feedback Cap-Max (Crss) 235 pF
Turn Off Time-Max (toff) 225ns
Turn On Time-Max (ton) 200ns
RoHS Status ROHS3 Compliant
BUK9520-55,127 Product Details

BUK9520-55,127 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 110 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2400pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [52A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 208A.The DS breakdown voltage should be maintained above 55V to maintain normal operation.To operate this transistor, you will need a 55V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V).

BUK9520-55,127 Features


the avalanche energy rating (Eas) is 110 mJ
based on its rated peak drain current 208A.
a 55V drain to source voltage (Vdss)


BUK9520-55,127 Applications


There are a lot of NXP USA Inc.
BUK9520-55,127 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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