IRF7353D1PBF

new-10%

Manufacturer part number:IRF7353D1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 6.5A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7353D1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	FETKY™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	6.5A
Number of Elements	1
Power Dissipation-Max	2W Ta
Power Dissipation	20W
Turn On Delay Time	8.1 ns
Forward Current	2.7A
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	32mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6.5A Ta
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Rise Time	8.9ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Forward Voltage	390mV
Fall Time (Typ)	17 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	6.5A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Input Capacitance	650pF
Max Forward Surge Current (Ifsm)	11A
FET Feature	Schottky Diode (Isolated)
Drain to Source Resistance	46mOhm
Rds On Max	32 mΩ
Nominal Vgs	1 V
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free