SI1304BDL-T1-E3

new-10%

Manufacturer part number:SI1304BDL-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 0.9A SOT323-3

Case Package:SOT-23

Datasheet:SI1304BDL-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	270mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Power Dissipation-Max	340mW Ta 370mW Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	340mW
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	270m Ω @ 900mA, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	100pF @ 15V
Current - Continuous Drain (Id) @ 25°C	900mA Tc
Gate Charge (Qg) (Max) @ Vgs	2.7nC @ 4.5V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	5 ns
Continuous Drain Current (ID)	900mA
Threshold Voltage	1.3V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	0.85A
Drain to Source Breakdown Voltage	30V
Nominal Vgs	1.3 V
Height	990.6μm
Length	2.1844mm
Width	1.3462mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free