IRF7401PBF Description
The most latest manufacturing techniques are used to produce this HEXFET? Power MOSFET, which has an exceptionally low on-resistance per silicon area. Other features of this design include higher repeated avalanche rating, rapid switching, and junction working temperature of 175°C. Together, these features provide a very reliable and efficient device that can be applied to a variety of situations.
IRF540ZPBF Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
IRF540ZPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
