IRF7401PBF Description

The most latest manufacturing techniques are used to produce this HEXFET? Power MOSFET, which has an exceptionally low on-resistance per silicon area. Other features of this design include higher repeated avalanche rating, rapid switching, and junction working temperature of 175°C. Together, these features provide a very reliable and efficient device that can be applied to a variety of situations.

IRF540ZPBF Features

• Advanced Process Technology

• Ultra Low On-Resistance

• 175°C Operating Temperature

• Fast Switching

• Repetitive Avalanche Allowed up to Tjmax

IRF540ZPBF Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial