IRL1104STRR

new-10%

Manufacturer part number:IRL1104STRR

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 104A D2PAK

Case Package:SOT-23

Datasheet:IRL1104STRR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	1998
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.4W Ta 167W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 62A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3445pF @ 25V
Current - Continuous Drain (Id) @ 25°C	104A Tc
Gate Charge (Qg) (Max) @ Vgs	68nC @ 4.5V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Drain Current-Max (Abs) (ID)	104A
Drain-source On Resistance-Max	0.008Ohm
Pulsed Drain Current-Max (IDM)	416A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	340 mJ
RoHS Status	Non-RoHS Compliant