IRF7420 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7420 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2006
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Terminal Finish
NOT SPECIFIED
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G8
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
14m Ω @ 11.5A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3529pF @ 10V
Current - Continuous Drain (Id) @ 25°C
11.5A Tc
Gate Charge (Qg) (Max) @ Vgs
38nC @ 4.5V
Drain to Source Voltage (Vdss)
12V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
JEDEC-95 Code
MS-012AA
Drain Current-Max (Abs) (ID)
11.5A
Drain-source On Resistance-Max
0.014Ohm
Pulsed Drain Current-Max (IDM)
46A
DS Breakdown Voltage-Min
12V
RoHS Status
Non-RoHS Compliant
IRF7420 Product Details
IRF7420 Description
The exceptionally low on-resistance per silicon area is made possible by the use of cutting-edge manufacturing processes in these P-Channel HEXFET? Power MOSFETs from International Rectifier. This advantage gives the designer access to a very effective tool for load and battery control applications. For improved thermal properties and multiple-die capacity, the SO-8 has been updated through a bespoke leadframe, making it perfect for a range of power applications. With these advancements, board space requirements for applications involving many devices are drastically decreased. The container is made for wave, infrared, or vapor phase soldering methods.