IRF6611

new-10%

Manufacturer part number:IRF6611

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 32A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6611 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
JESD-30 Code	R-XBCC-N3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.9W Ta 89W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.6m Ω @ 27A, 10V
Vgs(th) (Max) @ Id	2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4860pF @ 15V
Current - Continuous Drain (Id) @ 25°C	32A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs	56nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	32A
Drain-source On Resistance-Max	0.0026Ohm
Pulsed Drain Current-Max (IDM)	220A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	310 mJ
RoHS Status	Non-RoHS Compliant