IRF7450PBF

new-10%

Manufacturer part number:IRF7450PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 2.5A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7450PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2001
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	170m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	940pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.5A Ta
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
JEDEC-95 Code	MS-012AA
Drain Current-Max (Abs) (ID)	2.5A
Drain-source On Resistance-Max	0.17Ohm
Pulsed Drain Current-Max (IDM)	20A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	230 mJ
RoHS Status	ROHS3 Compliant