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IRF7465

IRF7465

IRF7465

Infineon Technologies

IRF7465 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7465 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Series HEXFET®
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish TIN LEAD
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 1.14A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.9A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 1.9A
Drain-source On Resistance-Max 0.28Ohm
DS Breakdown Voltage-Min 150V
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
570 $1.02828 $586.1196
IRF7465 Product Details

IRF7465 Description


IRF7465 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 150V. The operating temperature of the IRF7465 is -55??C~150??C TJ and its maximum power dissipation is 2.5W Ta. IRF7465 has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7465 is 150V.



IRF7465 Features


  • RoHS Compliant

  • Industry-leading quality

  • Fully Characterized Avalanche Voltage and Current

  • Low Gate-to-Drain Charge to Reduce Switching Losses

  • Fully Characterized Capacitance Including Effective Coss to Simplify Design



IRF7465 Applications


  • Planar cell structure for wide SOA

  • Optimized for broadest availability from distribution partners

  • Product qualification according to JEDEC standard

  • Silicon optimized for applications switching below <100KHz

  • Industry standard surface-mount power package

  • Capable of being wave-soldered


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