IRLHM620TR2PBF

new-10%

Manufacturer part number:IRLHM620TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 20V 26A PQFN

Case Package:SOT-23

Datasheet:IRLHM620TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-VQFN Exposed Pad
Number of Pins	8
Supplier Device Package	PQFN (3x3)
Packaging	Cut Tape (CT)
Published	2013
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.7W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation	2.7W
Turn On Delay Time	7.5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	3620pF @ 10V
Current - Continuous Drain (Id) @ 25°C	26A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	78nC @ 4.5V
Rise Time	25ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	37 ns
Turn-Off Delay Time	57 ns
Continuous Drain Current (ID)	26A
Threshold Voltage	800mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Input Capacitance	3.62nF
Recovery Time	62 ns
Max Junction Temperature (Tj)	150°C
Drain to Source Resistance	1.8mOhm
Rds On Max	2.5 mΩ
Nominal Vgs	800 mV
Height	900μm
Length	3.2766mm
Width	3.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant