IRF7465PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7465PBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2001
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
280m Ω @ 1.14A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
330pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1.9A Ta
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
JEDEC-95 Code
MS-012AA
Drain Current-Max (Abs) (ID)
1.9A
Drain-source On Resistance-Max
0.28Ohm
DS Breakdown Voltage-Min
150V
RoHS Status
ROHS3 Compliant
IRF7465PBF Product Details
IRF7465PBF Description
IRF7465PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 150V. The operating temperature of the IRF7465PBF is -55??C~150??C TJ and its maximum power dissipation is 2.5W Ta. IRF7465PBF has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7465PBF is 150V.
IRF7465PBF Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design (See App. Note AN1001)