SI1411DH-T1-E3

new-10%

Manufacturer part number:SI1411DH-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 150V 0.42A SC70-6

Case Package:SOT-23

Datasheet:SI1411DH-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	28.009329mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	2.6Ohm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	4.5 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Current - Continuous Drain (Id) @ 25°C	420mA Ta
Gate Charge (Qg) (Max) @ Vgs	6.3nC @ 10V
Rise Time	11ns
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	9 ns
Continuous Drain Current (ID)	-520mA
Threshold Voltage	-4.5V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.42A
Drain to Source Breakdown Voltage	-150V
Height	1mm
Length	2mm
Width	1.25mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free