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IRF7477

  • IRF7477
  • IRF7477

IRF7477

IRF7477

Infineon Technologies

IRF7477 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7477 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2710pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14A Ta
Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status Non-RoHS Compliant
IRF7477 Product Details

IRF7477 Description


IRF7477 is an N-channel Power MNOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRF7477 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7477 has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of the IRF7477 is 30V.



IRF7477 Features


  • Ultra-Low Gate Impedance

  • Very Low RDS(on)

  • Fully Characterized Avalanche Voltage and Current

  • Low Charge Ratio to Eliminate False Turn On in High Frequency Circuits



IRF7477 Applications


  • High Frequency Synchronous Buck Converters for Computers and Communications


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